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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF830 датащи(PDF) 5 Page - Nell Semiconductor Co., Ltd |
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IRF830 датащи(HTML) 5 Page - Nell Semiconductor Co., Ltd |
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5 / 7 page  SEMICONDUCTOR Nell High Power Products RoHS RoHS Fig.12a. Unclamped lnductive test circuit Rectangular Pulse Duration , t1 (seconds) Fig.11b. Switching time waveforms Fig.12b. Unclamped lnductive waveforms Fig.10 Maximum effective transient thermal impedance, Junction-to-Case IRF830 Series VDS VGS 90% 10% td(ON) tR td(OFF) tF Fig.11a. Switching time test circuit + - RD VDS VGS RG 10V Pulse width ≤ 1µs Duty Factor ≤ 0.1% D.U.T. VDD 1 0.1 10 A + - VDD D.U.T. VDS RG 10V tP lAS 0.01Ω L 1 10 0.1 - 10 ² - 10 ³ - 10 ⁴ ₅ - 10 - 10 ² www.nellsemi.com Page 5 of 7 Vary t to obtain required I p AS Single pulse (Thermal response) D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM PDM t1 t2 Notes: 1. Duty factor, D = t / t 1 2 2. Peak T = P * R + J DM th(j-c) TC VDD tp Time lAS BVDSS lD(t) VDS(t) |
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