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2SC3679B датащи(PDF) 2 Page - Nell Semiconductor Co., Ltd

номер детали 2SC3679B
подробное описание детали  Silicon NPN triple diffusion planar transistor
PDF  3 Pages
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производитель  NELLSEMI [Nell Semiconductor Co., Ltd]
домашняя страница  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

2SC3679B датащи(HTML) 2 Page - Nell Semiconductor Co., Ltd

  2SC3679B Datasheet HTML 1Page - Nell Semiconductor Co., Ltd 2SC3679B Datasheet HTML 2Page - Nell Semiconductor Co., Ltd 2SC3679B Datasheet HTML 3Page - Nell Semiconductor Co., Ltd  
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-55°C (Case Temp)
25°C (Case Temp)
125°C (Case Temp)
SEMICONDUCTOR
Nell High Power Products
RoHS
RoHS
ELECTRICAL CHARACTERISTICS (T = 25°C)
a
UNIT
µA
ton
VCE(sat)
IEBO
tf
PARAMETER
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Fall time
ICBO
tstg
V
Collector cutoff current
Collector to emitter
voltage
saturation
SYMBOL
VCEO(SUS)*
hFE
VBE(sat)
fT
Turn-on time
Storage time
V
= 800V, l = 0
CB
E
V
= 7V, l = 0
EB
C
l = 0.5A, L = 50mH
C
V
= 4V,
CE
l = 2A
C
l = 2A, l = 0.4A
C
B
l = 2A, l = 0.4A
C
B
V
= 12V, l = -0.5A
CE
E
Min
Max
Typ
100
100
800
10
6
30
0.5
1.2
1
5
1
l = 2A, l
= 0.3A, l
= -1.0A
C
B1
B2
V
= 250V, R = 125Ω
CC
L
X
L 50mH
15V
1W
Y
G
6V
120W
50/60Hz
mercury relay
*V
Test circuit
CEO(sus)
Fig.1 l -V
Characteristics (Typical)
C
CE
Collector-Emitter Voltage V
(V)
CE
Fig.2 V
Characteristics (Typical)
,
V
- l
Temperature
CE(sat)
BE (sat)
C
Fig.3 l -V
Temperature Characteristics (Typical)
C
BE
Collector Current l (A)
C
Base-Emittor Voltage VBE(V)
0
1
2
3
4
5
0
1
2
3
4
700mA
500mA
400mA
300mA
200mA
l = 100mA
B
600mA
0
1
2
0.03 0.05
1
5
10
0.5
0.1
-55°C (Case Temp)
25°C (Case Temp)
125°C (Case Temp)
VBE(sat)
VCE(sat)
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
CONDITIONS
µs
MHz
V
Page 2 of 3
www.nellsemi.com
2SC3679B
V
V(BR)CEO
Collector to emitter breakdown voltage
Cob
V
= 10V, f = 1MHz
CB
(Current gain - Bandwidth product)
pF
Output capacitance
75
800
l = 10mA
C



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