02N06Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

VER.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

200

mA

Pulsed (Note 2)

800

mA

Source Current

Continuous

200

mA

Pulsed (Note 2)

800

mA

Power Dissipation (Note 3)

200

mW

Channel Temperature

150

°C

Storage Temperature Range

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pw≤10µs, Duty cycle≤1%.

3. Each terminal mounted on a recommended.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

+10

µA

Reverse

-10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

1

2.5

V

Static Drain-Source On-State Resistance

(Note 2)

1.7

2.4

Ω

2.8

4.0

Ω

Forward Transfer Admittance (Note 2)

100

mS

DYNAMIC PARAMETERS

Input Capacitance

15

pF

Output Capacitance

8

pF

Reverse Transfer Capacitance

4

pF

SWITCHING PARAMETERS (Note 3)

Total Gate Charge

2.2

4.4

nC

Gate to Source Charge

0.6

nC

Gate to Drain Charge

0.3

nC

Turn-ON Delay Time

6

ns

Rise Time

5

ns

Turn-OFF Delay Time

12

ns

Fall-Time

95

ns

Notes: 1. Pw≤300µs, Duty cycle≤1%.

2. Pulsed