UD4606Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-763.a

N-CHANNEL

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

30

V

Gate to Source Voltage

±20

V

Continuous Drain Current

2

6.9

A

Pulsed Drain Current

2

30

A

Total Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

P-CHANNEL

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

-30

V

Gate to Source Voltage

±20

V

Continuous Drain Current

2

-6

A

Pulsed Drain Current

2

-30

A

Total Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Surface Mounted on 1in

THERMAL DATA

PARAMETER

SYMBOL

PATINGS

UNIT

Junction to Ambient (Note)

110

°C/W

Note: Surface Mounted on 1in