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MPSA93G-AB3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали MPSA93G-AB3-R
подробное описание детали  HIGH VOLTAGE PNP TRANSISTOR
PDF  4 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MPSA93G-AB3-R датащи(HTML) 2 Page - Unisonic Technologies

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MPSA92/93
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-019.D
ABSOLUTE MAXIMUM RATING (TA=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
MPSA92
VCBO
-300
V
MPSA93
-200
V
Collector-Emitter Voltage
MPSA92
VCEO
-300
V
MPSA93
-200
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Collector Dissipation
SOT-89
PC
0.5
W
TO-92
0.62
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown
Voltage
MPSA92
BVCBO
IC=-100µA, IE=0
-300
V
MPSA93
-200
V
Collector-Emitter Breakdown
Voltage
MPSA92
BVCEO
IC=-1mA, IB=0
-300
V
MPSA93
-200
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100µA, IC=0
-5
V
Collector Cut-Off Current
MPSA92
ICBO
VCB=-200V, IE=0
-0.25 µA
MPSA93
-0.25 µA
Emitter Cut-Off Current
IEBO
VEB=-3V, IC=0
-0.10 µA
ON CHARACTERISTICS
DC Current Gain(note)
hFE
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
60
80
80
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-20mA, IB=-2mA
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-20mA, IB=-2mA
-0.90
V
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
fT
VCE=-20V, IC=-10mA, f=100MHz
50
MHz
Output Capacitance
MPSA92
Cob
VCB=-20V, IE=0, f=1MHz
6
pF
MPSA93
8
pF
Note: Pulse test: PW<300µs, Duty Cycle<2%, VCE(SAT)<200mV



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