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MN2510L-R-T3P-T датащи(PDF) 2 Page - Unisonic Technologies

номер детали MN2510L-R-T3P-T
подробное описание детали  NPN TRANSISTOR
PDF  3 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MN2510L-R-T3P-T датащи(HTML) 2 Page - Unisonic Technologies

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MN2510
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R214-020.a
ABSOLUTE MAXIMUM RATINGS (T
A=25
°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
25
A
Base Current
IB
5
A
Collector Power Dissipation (TC=25
°C)
Pc
125
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A =25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector Cut-Off Current
ICBO
VCB=100V
10
µA
Emitter Cut-Off Current
IEBO
VEB=6V
10
µA
Collector-Emitter Voltage
V(BR)CEO
IC=50mA
100
V
DC Current Gain (Note 1)
hFE
VCE=4V, IC=12A
40
120
Collector-Emitter Saturation Voltage
VCE(sat)
IC=12A, IB=1.2A
1.5
V
Base- Emitter Saturation Voltage
VBE(ON)
VCE=4V, IC=12A
1.8
V
Cut-Off Frequency
fT
VCE=12V, IE=-1A
20
MHz
Output Capacitance
Cob
VCB=10V, IE=0A, f=1MHz
200
pF
CLASSIFICATION OF hFE
RANK
R
O
hFE1
40~80
60~120



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