13003DF

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R223-014.c



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

600

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

9

V

Continuous Collector Current

1.5

A

Power Dissipation

1.25

W

50

W

Junction Temperature

150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

600

V

Collector-Emitter Breakdown Voltage

400

V

Emitter-Base Breakdown Voltage

9

V

Collector Cut-Off Current

0.1

mA

Collector-Emitter Cut-Off Current

0.1

mA

Emitter-Base Cut-Off Current

0.1

mA

DC Current Gain (Note 1)

15

30

0.75

0.9

Collector-Emitter Saturation Voltage (Note)

0.3

0.9

V

Base-Emitter Saturation Voltage (Note)

0.9

1.2

V

Storage Time

3

5

μs

Rise Time

1

μs

Fall Time

1

μs

Transition Frequency

5

MHz

Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%



RANK

A

B

C

RANGE

15 ~ 20

20 ~ 25

25 ~ 30