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CS5165GDWR16 датащи(PDF) 12 Page - Cherry Semiconductor Corporation |
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CS5165GDWR16 датащи(HTML) 12 Page - Cherry Semiconductor Corporation |
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12 / 19 page ![]() Figure 15: PWRGD signal becomes logic high as VOUT enters -8.5% of lower PWRGD threshold, VOUT = +2.84V (DAC = 10111) Figure 16: Power Good response to an out of regulation condition. Figure 16 shows the relationship between the regulated output voltage VFB and the Power Good signal. To prevent Power Good from interrupting the CPU unnecessarily, the CS5165 has a built-in delay to prevent noise at the VFB pin from toggling Power Good. The internal time delay is designed to take about 75µs for Power Good to go low and 65µs for it to recover. This allows the Power Good signal to be completely insensitive to out of regulation conditions that are present for a duration less than the built in delay (see figure 17). It is therefore required that the output voltage attains an out of regulation or in regulation level for at least the built- in delay time duration before the Power Good signal can change state. Figure 17: Power Good is insensitive to out of regulation conditions that are present for a duration less than the built in delay. Selecting External Components The CS5165 buck regulator can be used with a wide range of external power components to optimize the cost and performance of a particular design. The following informa- tion can be used as general guidelines to assist in their selection. NFET Power Transistors Both logic level and standard FETs can be used. The refer- ence designs derive gate drive from the 12V supply which is generally available in most computer systems and utilize logic level FETs. A charge pump may be easily implement- ed to support 5V only systems. Multiple FET’s may be par- alleled to reduce losses and improve efficiency and ther- mal management. Voltage applied to the FET gates depends on the applica- tion circuit used. Both upper and lower gate driver outputs are specified to drive to within 1.5V of ground when in the low state and to within 2V of their respective bias supplies when in the high state. In practice, the FET gates will be driven rail to rail due to overshoot caused by the capacitive load they present to the controller IC. For the typical appli- cation where VCC = 12V and 5V is used as the source for the regulator output current, the following gate drive is provided: VGS (TOP) = 12V - 5V = 7V, VGS(BOTTOM) = 12V (see Figure 18). Trace 1 PWRGD (2V/div) Trace 4 VFB (1V/div) Trace 1 PWRGD (2V/div) Trace 4 VFB (1V/div) Trace 2 - PWRGD (2V/div) Trace 4 - VOUT (1V/div) 12 Application Information: continued |
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