2SD1071

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R203-043.b



PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

300

V

Collector to Emitter Voltage

300

V

Emitter to Base Voltage

6

V

Collector Current

6

A

Base Current

2.5

A

Collector Dissipation

40

W

Junction Temperature

+150

C

Storage Temperature

-40~+150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

3

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector to Base Voltage

300

V

Collector to Emitter Voltage

300

V

Emitter to Base Voltage

6

V

Collector Cut-Off Current

0.1

mA

Emitter Cut-Off Current

150

mA

DC Current Gain

500

Collector-Emitter Saturation Voltage

1.5

V

Base-Emitter Saturation Voltage

2.0

V