SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

MP35..S

UNIT

420

08

560

700

840

600

800

1000

1200

06

12

10

600

800

1000

1200

V

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified output current (Fig.1)

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

RMS isolation voltage from case to leads

Operating junction storage temperature range

2

I t

2500

660

35

400

2

A s

A

A

V

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µA

SYMBOL

MP35..S

UNIT

08

06

12

10

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

Typical junction capacitance per diode

300

3000

1.1

2

pF

voltage per diode

TEST

CONDITIONS

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

°C/W

SYMBOL

MP35..S

UNIT

08

06

12

10

Typical thermal resistance

(1) With heatsink

(1)

1.4

(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with

Notes

M5 screw

PRIMARY CHARACTERRISTICS

35A

600V to 1200V

1.1V

2 µA

150ºC

400A

Storage temperature range

ºC

I = 17.5A

F

T = 25°C

A

4V, 1MHz

T = 150°C

A

MP35S

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