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2N70Z датащи(PDF) 2 Page - Unisonic Technologies

номер детали 2N70Z
подробное описание детали  2A, 700V N-CHANNEL POWER MOSFET
PDF  6 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N70Z датащи(HTML) 2 Page - Unisonic Technologies

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2N70Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-766.B
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
2.0
A
Drain Current
Continuous
ID
2.0
A
Pulsed (Note 2)
IDM
8.0
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
140
mJ
Repetitive (Note 2)
EAR
2.8
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
30
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=45mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
°С/W
Junction to Case
θJc
4.24
°С/W
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
700
V
Drain-Source Leakage Current
IDSS
VDS = 700V, VGS = 0V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 20V, VDS = 0V
5
μA
Reverse
VGS = -20V, VDS = 0V
-5
μA
Breakdown Voltage Temperature
Coefficient
△
BVDSS/T
△ J ID = 250 μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
5.0
6.3
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V, f =1MHz
270 350
pF
Output Capacitance
COSS
38
50
pF
Reverse Transfer Capacitance
CRSS
5
7
pF



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