C147D datasheet(2/5 Pages) DIGITRON

2 / 5 page

DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

C147A-C147PB

HIGH POWER SILICON CONTROLLED RECTIFIER

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Max

Units

Test Condition

Peak off-state and reverse current

TJ = -40 to 125°C

VDRM = VRRM =

C147A

C147B

C147C

C147D

C147E

C147M

C147S

C147N

C147T

C147P

C147PA

C147PB

IDRM,

IRRM

6.5

100 Volts peak

200 Volts peak

300 Volts peak

400 Volts peak

500 Volts peak

600 Volts peak

700 Volts peak

800 Volts peak

900 Volts peak

1000 Volts peak

1100 Volts peak

1200 Volts peak

150

TC = 25°C, VD = 12Vdc, RL = 12ohms

DC gate trigger current

IGT

300

mAdc

TC = -40°C, VD = 12Vdc, RL = 12ohms

TC = 25°C, VD = 12Vdc, RL = 12ohms

3.5

TC = -40°C, VD = 12Vdc, Rl = 12ohms

DC gate trigger voltage

VGT

0.25

Vdc

TC = 125°C, rated VDRM, RL = 1000ohms

Peak on-state voltage

VTM

TC = 25°C, ITM = 500A(pk), 1ms wide pulse,

duty cycle ≤ 1%

Holding current

250

mAdc

TC = 25°C anode supply = 24Vdc, gate

supply = 10V/20ohms.

Initial forward pulse = 2A, 0.1 ms to 10 ms

wide

Critical rate of rise of off-state voltage

(higher values may cause device switching)

dv/dt

200

V/µs

TC = 125°C, rated VDRM, using linear

exponential rising waveform, gate open

circuited

Exponential dv/dt = VDRM / т) (0.632)

Thermal resistance

ӨJC

0.35

°C/W

Junction to case

Typical turn-off time

125

µsec

1) TJ = 125°C

2) ITM = 150A, peak

3) VR = 50V, min

4) VDRM (reapplied)

5) Rate-of-rise of reapplied off state

voltage = 20V/µsec (linear)

6) Commutation di/dt = 5A/µsec

7) Repetition rate = 1PPS

8) Gate bias during turn-off

interval = 0V, 100Ω

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20130116

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