IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA15N50L2 IXTP15N50L2

IXTH15N50L2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

4.5

6.3

8.0

S

C

iss

4080

pF

C

oss

V

265

pF

C

rss

68

pF

t

d(on)

38

ns

t

r

73

ns

t

d(off)

110

ns

t

f

65

ns

Q

g(on)

123

nC

Q

gs

V

20

nC

Q

gd

72

nC

R

thJC

0.42

°C/W

R

thCS

(TO-220)

0.50

°C/W

(TO-247)

0.25

°C/W

Safe Operating Area Specification

Characteristic Values

Symbol

Test Conditions

Min.

Typ.

Max.

SOA

V

150

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

15

A

I

SM

Repetitive, pulse width limited by T

JM

60

A

V

SD

I

1.5

V

t

rr

570

ns

I

TO-247 Outline

1 = Gate

2 = Drain

3 = Source

Pins: 1 - Gate

2 - Drain

3 - Source

TO-220 Outline

Resistive Switching Times

V

R

Note

1: Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

TO-263 Outline

1 = Gate

2 = Drain

3 = Source

4 = Drain