IXTK32P60P datasheet(1/5 Pages) IXYS

номер детали	IXTK32P60P

подробное описание детали	P-Channel Enhancement Mode Avalanche Rated

PDF	5 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

Logo

1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

- 600

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

- 600

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

- 32

A

I

DM

T

C = 25°C, pulse width limited by TJM

- 90

A

I

AR

T

C = 25°C

- 32

A

E

AS

T

C = 25°C

3.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

890

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting force

(PLUS247)

20..120/4.5..27

N/lb.

Mounting torque

(TO-264)

1.13/10

Nm/lb.in.

Weight

PLUS247

6

g

TO-264

10

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250μA

- 600

V

GS(th)

V

DS = VGS, ID = - 250μA

- 2.5

- 4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

- 50

μA

V

GS = 0V

T

J = 125°C

- 250

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

350 m

Ω

PolarPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTK32P60P

IXTX32P60P

V

DSS

= - 600V

I

D25

= - 32A

R

DS(on) ≤

≤≤≤≤

350m

Ω

Features

International standard packages

Rugged PolarPTM process

Avalanche Rated

Low package inductance

Applications

High side switching

Push-pull amplifiers

DC Choppers

Automatic test equipment

G = Gate

D = Drain

S = Source

TAB = Drain

(TAB)

G

D

S

TO-264 (IXTK)

PLUS247 (IXTX)

(TAB)

DS99990(5/08)

Preliminary Technical Information

Аналогичный номер детали - IXTK32P60P

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXTK33N50	85Kb / 4P	High Current MegaMOSFET
Inchange Semiconductor ...	IXTK33N50	295Kb / 2P	isc N-Channel MOSFET Transistor
	IXTK33N50	296Kb / 2P	isc N-Channel MOSFET Transistor
	IXTK33N50-TO-220F	296Kb / 2P	isc N-Channel MOSFET Transistor
	IXTK33N50-TO-3PL	295Kb / 2P	isc N-Channel MOSFET Transistor

More results

Аналогичное описание - IXTK32P60P

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXTH26P20P	190Kb / 6P	P-Channel Enhancement Mode Avalanche Rated
	IXTA76P10T	222Kb / 2P	P-Channel Enhancement Mode Avalanche Rated
	IXTR48P20P	131Kb / 5P	P-Channel Enhancement Mode Avalanche Rated
	IXTP36P15P	180Kb / 6P	P-Channel Enhancement Mode Avalanche Rated
	IXTR32P60P	123Kb / 5P	P-Channel Enhancement Mode Avalanche Rated
	IXTQ52P10P	187Kb / 6P	P-Channel Enhancement Mode Avalanche Rated
	IXTQ14N60P	166Kb / 5P	P-Channel Enhancement Mode Avalanche Rated
	IXTT20P50P	134Kb / 5P	P-Channel Enhancement Mode Avalanche Rated
	IXTH48P20P	138Kb / 5P	P-Channel Enhancement Mode Avalanche Rated
	IXTN90P20P	126Kb / 5P	P-Channel Enhancement Mode Avalanche Rated

More results

IXTK32P60P датащи(PDF) 1 Page - IXYS Corporation

IXTK32P60P датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXTK32P60P

Аналогичное описание - IXTK32P60P

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL