ABSOLUTE MAXIMUM RATINGS

(1)

THS4150

THS4151

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

PACKAGED DEVICES

EVALUATION

MSOP PowerPAD™

MSOP

MODULES

SMALL OUTLINE(D)

(DGN)

SYMBOL

(DGK)

SYMBOL

THS4150CD

THS4150CDGN

AQB

THS4150CDGK

ATT

THS4150EVM

0°C to 70°C

THS4151CD

THS4151CDGN

AQD

THS4151CDGK

ATU

THS4151EVM

THS4150ID

THS4150IDGN

AQC

THS4150IDGK

AST

–

–40°C to 85°C

THS4151ID

THS4151IDGN

AQE

THS4151IDGK

ASU

–

(1)

For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

Over operating free-air temperature range (unless otherwise noted).

UNIT

Supply voltage

±16.5 V

Input voltage

150 mA

Differential input voltage

±6 V

Continuous total power dissipation

See Dissipation Rating Table

150°C

125°C

C suffix

0°C to 70°C

Operating free-air temperature

I suffix

–40°C to 85°C

Storage temperature

–65°C to 150°C

HBM

2500 V

ESD ratings

CDM

1500 V

MM

200 V

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The THS415x may incorporate a PowerPad™ on the underside of the chip. This acts as a heatsink and must be connected to a

thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature

which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the

PowerPad™ thermally enhanced package.

(3)

The absolute maximum temperature under any condition is limited by the constraints of the silicon process.

(4)

The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may

result in reduced reliability and/or lifetime of the device.

(5)

See the MSL/Reflow Rating information provided with the material, or see TI's web site at www.ti.com for the latest information.

2

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