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THS4221DBVT датащи(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали THS4221DBVT
подробное описание детали  LOW-DISTORTION, HIGH-SPEED, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
PDF  41 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

THS4221DBVT датащи(HTML) 6 Page - National Semiconductor (TI)

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THS4221, THS4225
THS4222, THS4226
SLOS399G − AUGUST 2002 − REVISED JANUARY 2004
www.ti.com
6
ELECTRICAL CHARACTERISTICS (continued)
VS = 5 V, RL = 499 Ω, and G = 1 unless otherwise noted
TYP
OVER TEMPERATURE
PARAMETER
TEST CONDITIONS
25°C
25°C
0°C to
70°C
−40°C
to 85°C
UNITS
MIN/
MAX
POWER SUPPLY
Specified operating voltage
5
15
15
15
V
Max
Maximum quiescent current
Per channel
12
15
17
19
mA
Max
Power supply rejection (±PSRR)
70
62
60
60
dB
Min
POWER-DOWN CHARACTERISTICS
Maximum power-down current
PD ≤ REF +1.0 V, REF = 0 V,
Per channel
500
750
900
900
µA
Max
REF 0 V or VS
Enable
REF+1.8
V
Min
Power down voltage level(1)
REF = 0 V, or VS−
Power down
REF+1
V
Max
Power-down voltage level(1)
REF VS or floating
Enable
REF−1
V
Min
REF = VS+ or floating
Power down
REF−1.5
V
Max
Turnon time delay
50% of final value
200
ns
Typ
Turnoff time delay
50% of final value
500
ns
Typ
Input impedance
58
Ω
Typ
Isolation
f = 5 MHz
80
dB
Typ
(1) For detail information on the power-down circuit, refer to the powerdown section in the application information of this data sheet.



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