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OPA890IDBVT датащи(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали OPA890IDBVT
подробное описание детали  Low-Power, Wideband, Voltage-Feedback OPERATIONAL AMPLIFIER with Disable
PDF  34 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

OPA890IDBVT датащи(HTML) 2 Page - National Semiconductor (TI)

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DIS
+V
S
Output
NC
NC
InvertingInput
NoninvertingInput
-VS
TOPVIEW
SO
TOPVIEW
SOT23
1
2
3
6
5
4
+V
S
DIS
InvertingInput
Output
-VS
NoninvertingInput
1
2
3
6
5
4
NC=NoConnection
PinOrientation/PackageMarking
BRI
OPA890
SBOS369B – MAY 2007 – REVISED DECEMBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION(1)
SPECIFIED
PACKAGE
TEMPERATURE
PACKAGE
ORDERING
TRANSPORT
PRODUCT
PACKAGE-LEAD
DESIGNATOR
RANGE
MARKING
NUMBER
MEDIA, QUANTITY
OPA890ID
Rail, 75
OPA890
SO-8
D
–40°C to +85°C
OPA890
OPA890IDR
Tape and Reel, 2500
OPA890IDBVT
Tape and Reel, 250
OPA890
SOT23-6
DBV
–40°C to +85°C
BRI
OPA890IDBVR
Tape and Reel, 3000
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range (unless otherwise noted).
OPA890
UNIT
Power Supply
±6.5
V
Internal Power Dissipation
See Thermal Characteristics
Input Voltage Range
±VS
V
Storage Temperature Range
–65 to +125
°C
Maximum Junction Temperature (TJ)
+150
°C
Maximum Junction Temperature, Continuous Operation, Long-Term Reliability
+140
°C
Human Body Model (HBM)
2000
V
ESD Rating:
Charge Device Model (CDM)
1500
V
Machine Model (MM)
200
V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
PIN CONFIGURATIONS
2
Submit Documentation Feedback
Copyright © 2007–2009, Texas Instruments Incorporated
Product Folder Link(s): OPA890



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