MFE212 datasheet(2/5 Pages) DIGITRON

номер детали	MFE212

подробное описание детали	N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS

PDF	5 Pages

Scroll/Zoom	100%

производитель	DIGITRON [Digitron Semiconductors]

домашняя страница	http://www.digitroncorp.com

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DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

MFE211 – MFE212

N-CHANNEL DUAL GATE SILICON NITRIDE

PASSIVATED MOS FIELD EFFECT TRANSISTORS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Max

Unit

Bandwidth

(VDD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz)

(VDD = 18 Vdc, fLO = 245 MHz, f RF = 200 MHz)

(VDD = 18 Vdc, VGG = 6.0 Vdc, f = 45 MHz)

MFE211

MFE212

MFE211

5.0

4.0

3.5

7.0

6.0

MHz

Gain Control Gate Supply Voltage (4)

(VDD = 18 Vdc, ΔGps = -30 dB, f = 200 MHz)

(VDD = 18 Vdc, ΔGps = -30 dB, f = 45 MHz)

MFE211

VGG(GC)

-2.0

±1.0

Vdc

All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate voltage limiting network is functioning

properly.

Pulse test: Pulse width = 300µs, duty cycle ≤ 2%.

This parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating. The signal is applied to gate 1 with gate 2 at ac ground.

Δ Gps is defined as the change in Gps from the value at VGG = 7.0 volts (MFE211).

Power Gain Conversion. Amplitude at input from local oscillator is adjusted for maximum GC.

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20120705

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