RJK4002DPD

Preliminary

R07DS0835EJ0210 Rev.2.10

Page 2 of 6

Jan 29, 2014

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

400

—

—

V

Zero gate voltage drain current

—

—

1

μA

Gate to source leak current

—

—

±0.1

μA

Gate to source cutoff voltage

3.5

—

4.5

V

Static drain to source on state resistance

—

2.4

2.9

Ω

Note 4

Input capacitance

Ciss

—

165

—

pF

f = 1 MHz

Output capacitance

Coss

—

25

—

pF

Reverse transfer capacitance

Crss

—

2.6

—

pF

Turn-on delay time

—

11

—

ns

Ω

Rg = 10

Ω

Rise time

—

12

—

ns

Turn-off delay time

—

23

—

ns

Fall time

—

20

—

ns

Total gate charge

Qg

—

6.0

—

nC

Gate to source charge

Qgs

—

1.2

—

nC

Gate to drain charge

Qgd

—

3.4

—

nC

Body-drain diode forward voltage

—

0.9

1.5

V

Note 4

Body-drain diode reverse recovery time

—

200

—

ns

μs

Note:

4. Pulse test

5. This device is sensitive to electrostatic discharge.

It is recommended to adopt appropriate cautions when handling this product.