TIP47 TIP49 TIP48 TIP50

3

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.01

0.1

1.0

1.0

100

Z

θJC(t) = r(t) RθJC

R

θJC = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

θJC(t)

P(pk)

t1

t2

SINGLE PULSE

1.0 k

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.02

0.01

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02

0.05

0.2

0.5

2.0

5.0

200

500

10

20

50

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

20

5.0

50

500

Figure 5. Active Region Safe Operating Area

0.02

0.05

SECONDARY BREAKDOWN LIMITED

THERMALLY LIMITED @ 25

°C

BONDING WIRE LIMITED

1.0 ms

dc

100

µs

0.2

0.1

5.0

2.0

CURVES APPLY

BELOW RATED VCEO

1.0

0.5

100

200

500

µs

TC ≤ 25°C

TIP47

TIP48

TIP49

TIP50

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150 _C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.05

0.1

0.2

0.02

0.5

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Turn–Off Time

5.0

2.0

1.0

0.5

0.2

0.1

0.05

1.0

2.0

ts

TJ = 25°C

VCC = 200 V

IC/IB = 5.0

tf

IC, COLLECTOR CURRENT (AMPS)

+ 4.5

+ 3.5

+ 2.5

+ 1.5

0

– 0.5

– 1.5

– 2.5

*APPLIES FOR IC/IB ≤ hFE/5

θVC FOR VCE(sat)

θVB FOR VBE

Figure 7. Temperature Coefficients

0.02

0.05

0.1

0.2

0.5

1.0

2.0

+ 25

°C to +150°C

– 55

°C to +25°C

+ 25

°C to +150°C

– 55

°C to +25°C

+ 0.5