MRF559 datasheet(1/5 Pages) ADPOW

номер детали	MRF559

подробное описание детали	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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производитель	ADPOW [Advanced Power Technology]

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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

MRF559

MRF559G

Rev A 9/2005

* G Denotes RoHS Complaint, Pb Free Terminal Finish

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

16

Vdc

VCBO

Collector-Base Voltage

30

Vdc

VEBO

Emitter-Base Voltage

3.0

Vdc

IC

Collector Current

150

mA

Thermal Data

P

D

Total Device Dissipation @ TC = 75ºC

Derate above 75ºC

2.0

20

Watts

mW/ ºC

Tstg

Storage Temperature Range

-65 to +150

ºC

Macro X

Features

•

Specified @ 12.5 V, 870 MHz Characteristics

•

Output Power = .5 W

•

Minimum Gain = 8.0 dB

•

Efficiency 50%

•

Cost Effective Macro X Package

•

Electroless Tin Plated Leads for Improved Solderability

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

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