TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

4

Motorola Bipolar Power Transistor Device Data

TJ, JUNCTION TEMPERATURE (°C)

103

– 0.3

101

100

10–2

102

10–1

10–3

10 M

100 k

10 k

0.1 k

1.0 M

1.0 k

IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

300

500

0.1

0.2

0.4

6.0

0.06

100

70

50

30

10

7.0

0.3

VBE, BASE–EMITTER VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VCE = 2.0 V

5.0

1.0

2.0

0.6

1.6

2.0

20

30

100

1000

10

0.8

0.4

50

0

300

500

200

25

°C

TJ = 150°C

– 55

°C

1.2

2.0

0.06

IC, COLLECTOR CURRENT (AMP)

1.6

0.8

1.2

0.4

0

0.1

0.2 0.3 0.4

0.6

1.0

+ 2.5

IC = 1.0 A

20

60

80

100

120

160

140

40

TJ = 25°C

2.5 A

5.0 A

2.0 3.0 4.0

6.0

VBE(sat) @ IC/IB = 10

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 10

+ 2.0

+ 1.5

+ 1.0

+ 0.5

0

– 0.5

– 1.0

– 1.5

– 2.0

– 2.5

*APPLIES FOR IC/IB ≤ hFE/4

*

θVC FOR VCE(sat)

θVB FOR VBE

Figure 11. Temperature Coefficients

– 0.2 – 0.1

0

+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6

Figure 12. Collector Cut–Off Region

Figure 13. Effects of Base–Emitter Resistance

VCE = 30 V

TJ = 150°C

100

°C

25

°C

REVERSE

FORWARD

IC = ICES

VCE = 30 V

IC = 10 x ICES

IC ≈ ICES

IC = 2 x ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

200

20

4.0

0.06

0.1

0.2 0.3

0.5

1.0

2.0 3.0 4.0

6.0

+ 25

°C to +150°C

– 55

°C to +25°C

+ 25

°C to +150°C

– 55

°C to +25°C

+ 0.7

TJ = 25°C