TIP30C datasheet(1/4 Pages) MOTOROLA

номер детали	TIP30C

подробное описание детали	1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 30 WATTS

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производитель	MOTOROLA [Motorola, Inc]

домашняя страница	http://www.freescale.com

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Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general purpose amplifier and switching applications.

Compact TO–220 AB package.

MAXIMUM RATINGS

Rating

Symbol

TIP29B

TIP30B

TIP29C

TIP30C

Unit

Rating

Symbol

TIP30B

TIP30C

Unit

Collector–Emitter Voltage

VCEO

80

100

Vdc

Collector–Base Voltage

VCB

80

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

1.0

3.0

Adc

Base Current

IB

0.4

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

30

0.24

Watts

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

Watts

W/

_C

Unclamped Inductive Load Energy

(See Note 3)

E

32

mJ

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

Thermal Resistance, Junction to Case

R

θJC

4.167

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

TIP29B, TIP30B

(IC = 30 mAdc, IB = 0)

TIP29C, TIP30C

VCEO(sus)

80

100

—

Vdc

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

ICEO

—

0.3

mAdc

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0)

TIP29B, TIP30B

(VCE = 100 Vdc, VEB = 0)

TIP29C, TIP30C

ICES

—

200

µAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

hFE

40

15

—

75

—

Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)

VCE(sat)

—

0.7

Vdc

Base–Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)

VBE(on)

—

1.3

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (2)

(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

—

MHz

Small–Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

—

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

(2) fT = hfe• ftest.

(3) This rating based on testing with LC = 20 mH, RBE = 100 Ω, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP29B/D

TIP29B

TIP29C

TIP30B

TIP30C

1 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

80 – 100 VOLTS

30 WATTS

NPN

PNP

CASE 221A–06

TO–220AB

REV 1

Аналогичный номер детали - TIP30C

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	TIP30C	145Kb / 3P	POWER TRANSISTORS(1.0A,40-100V,30W)
ON Semiconductor	TIP30C	137Kb / 4P	POWER TRANSISTORS COMPLEMENTARY SILICON 1995 REV 1
Power Innovations Ltd	TIP30C	85Kb / 6P	PNP SILICON POWER TRANSISTORS
Fairchild Semiconductor	TIP30C	37Kb / 4P	Medium Power Linear Switching Applications
List of Unclassifed Man...	TIP30C	335Kb / 6P	High Power Bipolar Transistor

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Аналогичное описание - TIP30C

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Motorola, Inc	2N5989	257Kb / 4P	12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS
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ON Semiconductor	BDX53B	169Kb / 6P	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS 1995 REV 7
	MJF31C	90Kb / 8P	3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS APRIL, 2002 ??Rev. 2
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