1

Motorola Bipolar Power Transistor Device Data

Plastic Medium-Power

Complementary Silicon Transistors

. . . designed for general–purpose amplifier and low–speed switching applications.

• High DC Current Gain —

hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector–Emitter Sustaining Voltage — @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

• TO–220AB Compact Package

*MAXIMUM RATINGS

Rating

Symbol

TIP120,

TIP125

TIP121,

TIP126

TIP122,

TIP127

Unit

Collector–Emitter Voltage

VCEO

60

80

100

Vdc

Collector–Base Voltage

VCB

60

80

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

5.0

8.0

Adc

Base Current

IB

120

mAdc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

65

0.52

Watts

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

Watts

W/

_C

Unclamped Inductive Load Energy (1)

E

50

mJ

Operating and Storage Junction,

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.92

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω.

80

0

0

20

40

60

80

100

120

160

Figure 1. Power Derating

T, TEMPERATURE (

°C)

40

20

60

140

TC

4.0

0

2.0

1.0

3.0

TA

TA

TC

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP120/D

TIP120

TIP121

TIP122

TIP125

TIP126

TIP127

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 – 80 – 100 VOLTS

65 WATTS

*Motorola Preferred Device

*

NPN

PNP

*

*

*

CASE 221A–06

TO–220AB

*

*

REV 2