170

Central

Semiconductor Corp.

TM

 ^

SOT-23 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR CMPD2003,

CMPD2003C, CMPD2003S, CMPD2004,

CMPD2004C, and CMPD2004S types are silicon

switching diodes manufactured by the epitaxial

planar process, designed for applications

requiring high voltage capability.

The following configurations are available:

CMPD2003

SINGLE

MARKING CODE: A82

CMPD2003C

DUAL, COMMON CATHODE

MARKING CODE: C3C

CMPD2003S

DUAL, IN SERIES

MARKING CODE: C3S

CMPD2004

SINGLE

MARKING CODE: D53

CMPD2004C

DUAL, COMMON CATHODE

MARKING CODE: DB7

CMPD2004S

DUAL, IN SERIES

MARKING CODE: DB6

MAXIMUM RATINGS (TA=25°C)

CMPD2003

CMPD2004

CMPD2003C

CMPD2004C

SYMBOL

CMPD2003S

CMPD2004S

UNITS

Continuous Reverse Voltage

VR

200

240

V

Peak RepetitiveReverse Voltage

VRRM

250

300

V

Peak Repetitive Reverse Current

IO

200

200

mA

Continuous Forward Current

IF

250

225

mA

Peak Repetitive Forward Current

IFRM

625

625

mA

Forward Surge Current, tp=1 ms

IFSM

4000

4000

mA

Forward Surge Current, tp=1 s

IFSM

1000

1000

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

QJA

357

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

CMPD2003

CMPD2004

CMPD2003C

CMPD2004C

CMPD2003S

CMPD2004S

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNIT

BVR

IR=100mA

250

300

V

IR

VR=200V

100

-

nA

CMPD2003

CMPD2003C

CMPD2003S

CMPD2004

CMPD2004C

CMPD2004S

SURFACE MOUNT

HIGH VOLTAGE SWITCHING DIODE

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