BAS28 datasheet(1/2 Pages) CENTRAL

номер детали	BAS28

подробное описание детали	DUAL, ISOLATED HIGH SPEED SWITCHING DIODE

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производитель	CENTRAL [Central Semiconductor Corp]

домашняя страница	http://www.centralsemi.com

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58

Central

Semiconductor Corp.

TM

BAS28

DUAL, ISOLATED HIGH SPEED

SWITCHING DIODE

SOT-143 CASE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BAS28

type is a ultra-high speed silicon switching

diode manufactured by the epitaxial planar

process, in an epoxy molded surface mount

package with isolated dual diodes, designed

for high speed switching applications.

Marking code is A61.

MAXIMUM RATINGS (TA=25

oC)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

75

V

Peak Repetitive Reverse Voltage

VRRM

85

V

Continuous Forward Current

IF

250

mA

Peak Repetitive Forward Current

IFRM

250

mA

Forward Surge Current, tp=1

µsec.

IFSM

4000

mA

Forward Surge Current, tp=1 msec.

IFSM

2000

mA

Forward Surge Current, tp=1 sec.

IFSM

1000

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

oC

Thermal Resistance

ΘJA

357

oC/W

ELECTRICAL CHARACTERISTICS (TA=25

oC unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=25V, TA=150

oC

30

µA

IR

VR=75V

1.0

µA

IR

VR=75V, TA=150

oC

50

µA

VF

IF=1.0mA

0.715

V

VF

IF=10mA

0.855

V

VF

IF=50mA

1.000

V

VF

IF=150mA

1.250

V

CT

VR=0, f=1 MHz

2.0

pF

trr

IF=IR=10mA, RL=100Ω, Rec. to 1.0mA

6.0

ns

Qs

IF=10mA, VR=5.0V, RL=500Ω

45

pC

VFR

IF=10mA, tr=20ns

1.75

V

Аналогичный номер детали - BAS28

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BAS28	35Kb / 7P	High-speed double diode 1996 Sep 10
Siemens Semiconductor G...	BAS28	102Kb / 4P	Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)
Infineon Technologies A...	BAS28	439Kb / 4P	Silicon Switching Diode Feb-21-2003
Guangdong Kexin Industr...	BAS28	40Kb / 2P	High-Speed Double Diode
NXP Semiconductors	BAS28	279Kb / 12P	High-speed double diode Rev. 3-22 July 2010

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Аналогичное описание - BAS28

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	1PS300	167Kb / 11P	Dual high-speed switching diode Rev. 5-5 March 2012
	1PS301	236Kb / 11P	Dual high-speed switching diode Rev. 5-6 March 2012
	1PS302	212Kb / 11P	Dual high-speed switching diode Rev. 6-23 July 2012
	BAS21PG	250Kb / 13P	Dual isolated high-voltage switching diode 9 June 2015
Nexperia B.V. All right...	BAS21PG	686Kb / 13P	Dual isolated high-voltage switching diode
	BAS16DY-Q	204Kb / 9P	High-speed dual switching diode 20 April 2023
	BAS16DY	212Kb / 9P	High-speed dual switching diode 20 April 2023
	1PS300	749Kb / 11P	Dual high-speed switching diode Rev. 5 - 5 March 2012
	1PS301	810Kb / 11P	Dual high-speed switching diode Rev. 5 - 6 March 2012
	1PS302	787Kb / 11P	Dual high-speed switching diode Rev. 6 - 23 July 2012

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BAS28 датащи(PDF) 1 Page - Central Semiconductor Corp

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Аналогичный номер детали - BAS28

Аналогичное описание - BAS28

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