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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CAT523 датащи(PDF) 3 Page - Catalyst Semiconductor |
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CAT523 датащи(HTML) 3 Page - Catalyst Semiconductor |
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3 / 10 page  CAT523 3 Advance Information AC ELECTRICAL CHARACTERISTICS: VDD = +2.7V to +5.5V, VREFH = +VDD, VREFL = 0V, unless otherwise specified Symbol Parameter Conditions Min Typ Max Units Digital tCSMIN Minimum CS Low Time 150 — — ns tCSS CS Setup Time 100 — — ns tCSH CS Hold Time 0 — — ns tDIS DI Setup Time 50 — — ns tDIH DI Hold Time 50 — — ns tDO1 Output Delay to 1 — — 150 ns tDO0 Output Delay to 0 — — 150 ns tHZ Output Delay to High-Z — 400 — ns tBusy Erase/Write Cycle Time — 4 5 ms tLZ Output Delay to Low-Z — 400 — ns tPROG Erase/Write Pulse Width 700 — — ns tPS PROG Setup Time 150 — — ns tCLKH Minimum CLK High Time 500 — — ns tCLKL Minimum CLK Low Time 300 — — ns fC Clock Frequency DC — 1 MHz Analog tDS DAC Settling Time to 1/2 LSB CLOAD = 10 pF, VDD = +5V — 3 10 µs CLOAD = 10 pF, VDD = +3V — 6 10 µs Pin Capacitance CIN Input Capacitance VIN = 0V, f = 1 MHz(2) —8 — pF COUT Output Capacitance VOUT = 0V, f = 1 MHz(2) —6 — pF NOTES: 1. All timing measurements are defined at the point of signal crossing VDD / 2. 2. These parameters are periodically sampled and are not 100% tested. Analog Output Temperature Power Supply DC ELECTRICAL CHARACTERISTICS (Cont.): VDD = +2.7V to +5.5V , VREFH = +VDD, VREFL = 0V, unless otherwise specified Symbol Parameter Conditions Min Typ Max Units FSO Full-Scale Output Voltage VR = VREFH–VREFL 0.99 VR 0.995 VR —V ZSO Zero-Scale Output Voltage VR = VREFH–VREFL — 0.005 VR 0.01 VR V IL DAC Output Load Current — — 1 µA ROUT DAC Output Impedance VDD = +5V — — 100k Ω VDD = +3V — — 150k Ω PSSR Power Supply Rejection ILOAD = 250 nA — — 1 LSB / V TCO VOUT Temperature Coefficient VREFH = +5V, VREFL = 0V — — 200 µV/ °C VDD = +5V, ILOAD = 250nA TCREF Temperature Coefficient of VREFH to VREFL — 700 — ppm / °C VREF Resistance IDD1 Supply Current (Read) Normal Operating — 400 600 µA IDD2 Supply Current (Write) VDD=5V — 1600 2500 µA VDD=3V — 1000 1600 µA VDD Operating Voltage Range 2.7 — 5.5 V CL = 100 pF, see note 1 |
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