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CAT28HT256 датащи(PDF) 4 Page - Catalyst Semiconductor

номер детали CAT28HT256
подробное описание детали  256K-Bit CMOS PARALLEL E2PROM
PDF  10 Pages
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производитель  CATALYST [Catalyst Semiconductor]
домашняя страница  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT28HT256 датащи(HTML) 4 Page - Catalyst Semiconductor

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CAT28HT256
8-94
Advanced
Stock No. 21065-03 2/98
Note:
(1) This parameter is tested intitially and after a design or process change that affects the parameter..
(2) A write pulse of less than 20ns duration will not initiate a write cycle.
(3) A timer of duration tBLC max. begins with every LOW to HIGH transition of WE. If allowed to time out, a page or byte write will begin;
however a transition from HIGH to LOW within tBLC max. stops the timer.
(4) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
A.C. CHARACTERISTICS, Write Cycle
VCC = 5V
±10%, unless otherwise specified. (Temperature 0˚C to 170˚C)
28HT256-20
28HT256-25
Symbol
Parameter
Min. Max.
Min.
Max.
Units
tWC
Write Cycle Time
10
10
ms
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
75
75
ns
tCS
CE Setup Time
0
0
ns
tCH
CE Hold Time
0
0
ns
tCW(2)
CE Pulse Time
100
100
ns
tOES
OE Setup Time
0
0
ns
tOEH
OE Hold Time
0
0
ns
tWP(2)
WE Pulse Width
100
100
ns
tDS
Data Setup Time
50
50
ns
tDH
Data Hold Time
10
10
ns
tINIT(1)
Write Inhibit Period After Power-up
5
10
5
10
ms
tBLC(1)(3) Byte Load Cycle Time
0.1
100
0.1
100
µs
A.C. CHARACTERISTICS, Read Cycle
VCC = 5V
±10%, unless otherwise specified. (Temperature 0˚C to 170˚C)
28HT256-20
28HT256-25
Symbol
Parameter
Min. Max.
Min.
Max.
Units
tRC
Read Cycle Time
200
250
ns
tCE
CE Access Time
200
250
ns
tAA
Address Access Time
200
250
ns
tOE
OE Access Time
80
100
ns
tLZ(1)
CE Low to Active Output
0
0
ns
tOLZ(1)
OE Low to Active Output
0
0
ns
tHZ(1)(4)
CE High to High-Z Output
50
50
ns
tOHZ(1)(4) OE High to High-Z Output
50
50
ns
tOH(1)
Output Hold from Address Change
0
0
ns



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