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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFHM830DPBF датащи(PDF) 6 Page - International Rectifier |
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IRFHM830DPBF датащи(HTML) 6 Page - International Rectifier |
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6 / 8 page  6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFHM830DPbF Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T 1K VCC DUT 0 L S |
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