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U424 датащи(PDF) 2 Page - Calogic, LLC

номер детали U424
подробное описание детали  N-Channel Dual JFET
PDF  2 Pages
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производитель  CALOGIC [Calogic, LLC]
домашняя страница  http://www.calogic.net
Logo CALOGIC - Calogic, LLC

U424 датащи(HTML) 2 Page - Calogic, LLC

  U424 Datasheet HTML 1Page - Calogic, LLC U424 Datasheet HTML 2Page - Calogic, LLC  
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U421 – U426
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC unless otherwise noted)
Gate-to-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .
±40V
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Device Dissipation (Each Side), TA = 25
oC
(Derate 3.2 mW/
oC to 150oC). . . . . . . . . . . . . . 400mW
Total Device Dissipation, TA = 25
oC
(Derate 6.0 mW/
oC to 150oC) . . . . . . . . . . . . . 750 mW
Storage Temperature Range . . . . . . . . . . . . . -65
oC to +150oC
ELECTRICAL CHARACTERISTICS (25oC unless otherwise noted)
SYMBOL
CHARACTERISTIC
U421-3
U424-6
UNIT
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
STATIC
BVGSS
Gate-Source Breakdown Voltage
-40
-60
-40
-60
V
IG = -1
µA, VDS = 0
BVG1G2
Gate-Gate Breakdown Voltage
±40
±40
IG = -1
µA, ID = 0, IS = 0
IGSS
Gate Reverse Current
(1)
1.0
3.0
pA
T = +25
oC
VGS = -20V,
VDS = 0
1.0
3.0
nA
T = +125
oC
IG
Gate Operating Current
(1)
.25
0.5
pA
T = +25
oC
VDG = 10V,
ID = 30
µA
.250
-500
T = +125
oC
VGS (off)
Gate-Source Cutoff Voltage
-0.4
-2.0
-0.4
-2.0
V
VDS = 10V, ID = 1nA
VGS
Gate-Source Voltage
-1.8
-2.9
VDG = 10V, ID = 30
µA
IDSS
Saturation Drain Current
60
1000
60
1800
µA
VDS = 10V, VGS = 0
DYNAMIC
gfs
Common-Source Forward Transconductance
300
1500
300
1500
VDS = 10V,
VGS = 0
f = 1 kHz
gos
Common-Source Output Conductance
10
10
Ciss
Common-Source Input Capacitance
3.0
3.0
pF
f = 1MHz
Crss
Common-Source Reverse Transfer Capacitance
1.5
1.5
gfs
Common-Source Forward Transconductance
120
350
120
350
VDG = 10V,
ID = 30
µA
f = 1kHz
gos
Common-Source Output Conductance
3.0
3.0
en
Equivalent Short Circuit Input
20
70
20
70
nV/ Hz
f = 10Hz
10
10
f = 1kHz
NF
Noise Figure
1.0
1.0
dB
f = 10 Hz
RG = 10 M
Ω
SYMBOL
CHARACTERISTIC
U421,4
U422,5
U423,6
UNIT
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
MATCH
| VGS1-VGS2 | Differential Gate-Source Voltage
10
15
25
mV
VDG = 10V, ID = 30
µA
| VGS1-VGS2 |
∆T
Differential Gate-Source Voltage
Change with Temperature
(2)
10
25
40
V/
oC
VDG = 10V, ID = 30
µA,
TA = -55
oC, TB = 25oC,
TC = 125
oC
CMRR
Common Mode Rejection Ratio
(3)
90
95
80
90
80
90
dB
ID = 30
µA, VDG = 10 to 20 V
NOTES:
1. Approximately doubles for every 10
oC increase in TA.
2. Measured at endpoints TA, TB and TC.
3. CMRR = 20log10
[
] VDD = 10V.
4. Case lead not connected.
VDD
VGS1-VGS2
ELECTRICAL CHARACTERISTICS (25
oC Unless otherwise noted)



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