2N7002

CORPORATION

SYMBOL

PARAMETERS

LIMITS

UNITS

TEST CONDITIONS

Drain-Source Voltage

60

V

Gate-Source Voltage

±40

Continuous Drain Current

0.115

A

0.073

Pulsed Drain Current

1

0.8

Power Dissipation

200

mW

80

Operating Junction Temperature Range

-55 to 150

Storage Temperature Range

-55 to 150

Lead Temperature (1/16" from case for 10 sec.)

300

THERMAL RESISTANCE RATINGS

SYMBOL

THERMAL RESISTANCE

LIMITS

UNITS

Junction-to-Ambient

625

K/W

NOTE:

1. Pulse width limited by maximum junction temperature.

SPECIFICATIONS

1

SYMBOL

PARAMETER

MIN

TYP

2

MAX

UNIT

TEST CONDITIONS

STATIC

Drain-Source Breakdown Voltage

60

70

V

Gate-Threshold Voltage

1

1.9

2.5

Gate-Body Leakage

±100

nA

Zero Gate Voltage Drain Current

1

µA

500

On-State Drain Current

3

500

1000

mA

Drain-Source On-Resistance

3

57.5

Ω

913.5

2.5

7.5

4.4

13.5

Drain-Source On-Voltage

3

0.25

0.375

V

1.25

3.75

2.2

6.75

Forward Transconductance

3

80

170

mS

Common Source Output Conductance

3, 4

500

µS

DYNAMIC

Input Capacitance

16

50

pF

Output Capacitance

4

11

25

Reverse Transfer Capacitance

25

SWITCHING

Turn-On Time

7

20

nS

Ω

(Switching time is essentially

independent of operating temperature)

Turn-Off Time

720

2. For design aid only, not subject to production testing.

3. Pulse test; PW =

≤80µS, duty cycle ≤1%.

4. This parameter not registered with JEDEC.

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