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HTP4A60S датащи(PDF) 1 Page - SemiHow Co.,Ltd. |
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HTP4A60S датащи(HTML) 1 Page - SemiHow Co.,Ltd. |
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1 / 6 page ![]() ◎ SEMIHOW REV.A1,March 2013 T2 T1 G FEATURES Repetitive Peak Off-State Voltage : 600V R.M.S On–State Current (I T(RMS) = 4A) Sensitive Gate Trigger Current - 5[mA] of IGT at I, II and III Quadrants. - 12[mA] of IGT at IV Quadrant. Applications Heating control, Lighting control, Motor control such like dimmer, sensor light, Humidifier, etc. General Description Semihow’s sensitive TRIAC product is a glass passivated device, has a low gate trigger current, high stability in gate trigger current to variation of operating temperature and high off state voltage. It is generally suitable for power and phase control in ac application. HTP4A60S 4 Quadrants Sensitive TRIAC V DRM = 600 V I T(RMS) = 4 A I TSM = 33 A I GT = 5mA/12mA Symbol Absolute Maximum Ratings (T J=25℃ unless otherwise specified ) Symbol Parameter Conditions Ratings Unit V DRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 600 V V RRM Repetitive Peak Reverse Voltage 600 V I T(AV) Average On-State Current Full sine wave, T C = 109.5 oC 3.6 A I T(RMS) R.M.S. On-State Current 4 A I TSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive 30/33 A I2t Fusing Current t = 10ms 4.5 A2S P GM Forward Peak Gate Power Dissipation T J = 125 °C 2 W P G(AV) Forward Average Gate Power Dissipation T J = 125 °C, over any 20ms 0.2 W I FGM Forward Peak Gate Current T J = 125 °C, pulse width ≤ 20us 1 A V RGM Reverse Peak Gate Voltage T J = 125 °C, pulse width ≤ 20us 6 V T J Operating Junction Temperature -40~+125 oC T STG Storage Temperature -40~+150 oC TO-220 |
Аналогичный номер детали - HTP4A60S |
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Аналогичное описание - HTP4A60S |
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