DP100 datasheet(2/3 Pages) KODENSHI

номер детали	DP100

подробное описание детали	Extremely low collector-to-emitter saturation voltage

PDF	3 Pages

Scroll/Zoom	100%

производитель	KODENSHI [KODENSHI_AUK CORP.]

домашняя страница	http://www.kodenshi.co.kr

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2 / 3 page

KST-9089-000

DP100

Absolute maximum ratings

(Ta=25

°C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

-15

Collector-Emitter voltage

VCEO

-12

Emitter-Base voltage

VEBO

-5

Collector current

-1

Collector dissipation

625

Junction temperature

150

°C

Storage temperature

Tstg

-55~150

°C

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-Base breakdown voltage

BVCBO

IC=-50μA, IE=0

-15

Collector-Emitter breakdown voltage

BVCEO

IC=-1mA, IB=0

-12

Emitter-Base breakdown voltage

BVEBO

IE=-50μA, IC=0

-5

Collector cut-off current

ICBO

VCB=-12V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

μA

hFE1

VCE=-1V, IC=-100mA

200

450

DC current gain

hFE2

VCE=-1V, IC=-1A

Collector-Emitter saturation voltage

VCE(sat)

IC=-400mA, IB=-20mA

-0.3

Base-Emitter saturation voltage

VBE(sat)

IC=-400mA, IB=-20mA

-1.2

Transition frequency

VCE=-5V, IC=-50mA

330

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

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