CSD19536KCS

SLPS485 – JANUARY 2014

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain-to-Source Voltage

100

V

Drain-to-Source Leakage Current

1

μA

Gate-to-Source Leakage Current

100

nA

Gate-to-Source Threshold Voltage

2.1

2.5

3.2

V

2.5

3.2

m

Ω

Drain-to-Source On Resistance

2.3

2.7

m

Ω

Transconductance

307

S

Dynamic Characteristics

Input Capacitance

9250

12000

pF

Output Capacitance

1820

2370

pF

Reverse Transfer Capacitance

47

61

pF

Series Gate Resistance

1.4

2.8

Ω

Gate Charge Total (10 V)

118

153

nC

Gate Charge Gate to Drain

17

nC

Gate Charge Gate to Source

37

nC

24

nC

Output Charge

335

nC

Turn On Delay Time

14

ns

Rise Time

8

ns

Turn Off Delay Time

38

ns

Fall Time

5

ns

Diode Characteristics

Diode Forward Voltage

0.9

1.1

V

Reverse Recovery Charge

548

nC

di/dt = 300 A/

μs

Reverse Recovery Time

110

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

Thermal Resistance Junction to Case

0.4

°C/W

Thermal Resistance Junction to Ambient

62

°C/W

2

Submit Documentation Feedback

Copyright © 2014, Texas Instruments Incorporated

Product Folder Links: CSD19536KCS