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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD19503KCS датащи(PDF) 1 Page - Texas Instruments |
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CSD19503KCS датащи(HTML) 1 Page - Texas Instruments |
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1 / 10 page  4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 60A TC = 125°C,I D = 60A G001 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 24 28 Qg - Gate Charge (nC) ID = 60A VDS = 40V G001 Gate (Pin 1) Drain (Pin 2) Source (Pin 3) CSD19503KCS www.ti.com SLPS479 – DECEMBER 2013 80 V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD19503KCS 1 FEATURES 2 • Ultra-Low Qg and Qgd PRODUCT SUMMARY • Low Thermal Resistance TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 80 V • Avalanche Rated Qg Gate Charge Total (10 V) 28 nC • Pb-Free Terminal Plating Qgd Gate Charge Gate to Drain 5.4 nC • RoHS Compliant VGS = 6 V 8.8 m Ω RDS(on) Drain-to-Source On Resistance • Halogen Free VGS = 10 V 7.6 m Ω • TO-220 Plastic Package VGS(th) Threshold Voltage 2.8 V APPLICATIONS ORDERING INFORMATION Device Package Media Qty Ship • Secondary Side Synchronous Rectifier TO-220 Plastic • Motor Control CSD19503KCS Tube 50 Tube Package DESCRIPTION ABSOLUTE MAXIMUM RATINGS This 80 V, 7.6 m Ω, TO-220 NexFET™ power TA = 25°C VALUE UNIT MOSFET is designed to minimize losses in power VDS Drain-to-Source Voltage 80 V conversion applications. VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 100 Pin Out Drawing Continuous Drain Current (Silicon limited), 94 ID TC = 25°C A Continuous Drain Current (Silicon limited), 66 TC = 100°C IDM Pulsed Drain Current (1) 113 A PD Power Dissipation 188 W TJ, Operating Junction and –55 to 175 °C TSTG Storage Temperature Range Avalanche Energy, single pulse EAS 140 mJ ID = 53 A, L = 0.1 mH, RG = 25 Ω (1) Pulse duration ≤ 300 μs, Duty cycle ≤ 1% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Аналогичный номер детали - CSD19503KCS |
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Аналогичное описание - CSD19503KCS |
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