ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

BC556-558

DESCRIPTION

SYMBOL

TEST CONDITION

VALUE

UNITS

DC Current Gain

hFE

IC=10uA,VCE=5V

A

typ90

B

typ150

C

typ270

IC=2mA,VCE=5V

BC556

75-475

BC557,8

75-800

A

110-220

B

200-450

C

420-800

IC=100mA,VCE=5V

A

typ120

B

typ200

C

typ400

Collector Emitter Saturation Voltage

VCE(Sat)

IC=10mA,IB=0.5mA

<0.30

V

IC=100mA,IB=5mA

<0.65

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=10mA,IB=0.5mA

typ0.70

V

IC=100mA,IB=5mA

typ0.90

V

Base Emitter on Voltage

VBE(on)

IC=2mA,VCE=5V

0.55-0.70

V

IC=10mA,VCE=5V

<0.82

V

DYNAMIC CHARACTERISTICS

Transistors Frequency

ft

IC=10mA, VCE=5V

typ150

MHz

f=100MHz

Collector out-put Capacitance

Ccbo

VCB=10V, f=1MHz

<6.0

pF

Emitter Input Capacitance

Cib

VEB=0.5V, f=1MHz

typ9.0

pF

Noise Figure

NF

IC=0.2mA, VCE=5V

<10

dB

Rs=2kohm, f=1kHZ

B=200Hz

ALL f=1KHz

Small Signal Current Gain

hfe

IC=2mA, VCE=5V

A

typ220

B

typ330

C

typ600

Input Impedance

hie

IC=2mA, VCE=5V

A

1.6-4.5

khoms

B

3.2-8.5

C

6.0-15

Voltage Feedback Ratio

hre

IC=2mA, VCE=5V

A

typ1.5

X`10-4

B

typ2.0

C

typ3.0

Out put Adimttance

hoe

IC=2mA, VCE=5V

A

<30

umhos

B

<60

C

<110

Continental Device India Limited

Data Sheet

Page 2 of 4

Boca Semiconductor Corp.

BSC

http://www.bocasemi.com