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TSC10 датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TSC10
подробное описание детали  High Voltage NPN Transistor
PDF  4 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC10 датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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Preliminary
TSC10
High Voltage NPN Transistor
2/4
Version: Preliminary
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
980
--
--
V
Collector-Emitter Breakdown Voltage
IC =10mA, IE =0
BVCEO
500
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
BVEBO
9
--
--
V
Collector Cutoff Current
VCES =980V, IE =0
ICES
--
--
10
uA
Emitter Cutoff Current
VEB 9V, IC =0
IEBO
--
--
0.5
uA
Collector-Emitter Saturation Voltage
IC / IB = 0.5A / 0.1A
IC / IB = 1.0A / 0.25A
IC / IB = 1.5A / 0.5A
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
--
--
--
0.3
0.5
0.9
0.5
1
2
V
Base-Emitter Saturation Voltage
IC / IB = 0.5A / 0.1A
IC / IB = 1.0A / 0.25A
VBE(SAT)1
VBE(SAT)2
--
--
--
--
1
1.2
V
DC Current Gain
VCE = 10V, IC = 10mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 1A
hFE
15
20
6
--
--
--
40
40
40
Dynamic Characteristics
Frequency
VCE = 10V, IC = 0.1A
fT
4
--
--
MHz
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
21
--
pF
Resistive Load Switching Time (Ratings)
Delay Time
td
--
0.05
0.2
uS
Rise Time
tr
--
1.1
--
uS
Storage Time
tSTG
--
2
4
uS
Fall Time
VCC = 125V, IC = 1A,
IB1 = IB2 = 0.2A,
tp = 25uS
Duty Cycle ≤1%
tf
--
0.4
0.7
uS
Note: pulse test: pulse width ≤300uS, duty cycle ≤ 2%



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