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BC807W датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали BC807W
подробное описание детали  200mW, PNP Small Signal Transistor
PDF  4 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

BC807W датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  BC807W Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd BC807W Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd BC807W Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd BC807W Datasheet HTML 4Page - Taiwan Semiconductor Company, Ltd  
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BC807-16W/25W/40W
200mW, PNP Small Signal Transistor
Small Signal Diode
Electrical Characteristics
Units
Collector-Base Breakdown Voltage
at-Ic=10uA
V
Collector-Emitter Breakdown Voltage
at-Ic=10mA
V
at-Ic=10uA
V
nA
uA
at=VEB= 5V
nA
-16W
-25W
-40W
-
-
-
at-
Ic=500mA
IB= 50mA
V
VCE= 5V
IC= 10mA
f= 100MHz
MHz
Tape & Reel specification
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
0.229 ±0.013
Collector Cut-off Current
IEBO
-
Emitter Cut-off Current
Transition frequency
fT
100
5
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
-
-
-
5
100
-
V(BR)CEO
V(BR)EBO
12.30 ±0.20
8.10 ±0.20
W
4.00 ±0.10
E
F
-
2.00 ±0.05
W1
P0
P1
80
-
T
D1
D2
55 Min
Item
Type Number
50
Symbol
V(BR)CBO
A
B
3.15 ±0.10
Min
Max
45
100
160
250
250
400
600
40
1.50 ± 0.10
0.7
178 ± 1
d
D
C
2.77 ±0.10
1.22 ±0.10
Symbol
Dimension(mm)
Emitter-Base Breakdown Voltage
Collector-Emitter saturation voltage
VCE(sat)
ICBO
at-VCE=1V,-Ic=100mA
at-VCE=1V,-Ic=500mA
DC Current Gain
hFE
at=VCB= 20V
at=VCB= 20V,TJ=150℃
W1
D1
D2
D
T
C
d
P1
P0
A
B
F
W
E
Direction of Feed
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
Version : A11



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