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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSL2583 датащи(PDF) 5 Page - ams AG |
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TSL2583 датащи(HTML) 5 Page - ams AG |
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5 / 33 page  TSL2581, TSL2583 LIGHT-TO-DIGITAL CONVERTER TAOS134A − JULY 2012 4 r r Copyright E 2012, TAOS Inc. The LUMENOLOGY r Company www.taosinc.com Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT I Supply current Active 175 250 μA IDD Supply current Power down — I2C activity 3 10 μA V INT SDA output low voltage 3 mA sink current 0 0.4 V VOL INT, SDA output low voltage 6 mA sink current 0 0.6 V I LEAK Leakage current −5 5 μA Operating Characteristics, VDD = 3 V, TA = 255C, (unless otherwise noted) (Notes 1, 2, 3, and 4) PARAMETER TEST CONDITIONS CHANNEL MIN TYP MAX UNIT fosc Oscillator frequency 705 750 795 kHz Dark ADC count value Ee = 0, ATIME = 0xB6 (200 ms), Ch0 0 1 5 counts Dark ADC count value Ee = 0, ATIME = 0xB6 (200 ms), gain = 16 × Ch1 0 1 5 counts ATIME 0xDB (100 ms) Ch0 37887 Full scale ADC count value ATIME = 0xDB (100 ms) Ch1 37887 counts Full scale ADC count value ATIME 0x6C (400 ms) Ch0 65535 counts ATIME = 0x6C (400 ms) Ch1 65535 λp = 625 nm, ATIME = 0xF6 (27 ms) Ch0 4000 5000 6000 ADC count value λp = 625 nm, ATIME = 0xF6 (27 ms) Ee = 171.6 μW/cm2, gain = 16 × Ch1 700 counts ADC count value λp = 850 nm, ATIME = 0xF6 (27 ms) Ch0 4000 5000 6000 counts λp = 850 nm, ATIME = 0xF6 (27 ms) Ee = 220 μW/cm2, gain = 16 × Ch1 2750 λ 625 nm 10 8 15 8 20 8 ADC count value ratio: Ch1/Ch0 λp = 625 nm 10.8 15.8 20.8 % ADC count value ratio: Ch1/Ch0 λ 850 nm 41 55 68 % ADC count value ratio: Ch1/Ch0 λp = 850 nm 41 55 68 % λ 625 nm ATIME 0xF6 (27 ms) Ch0 29.1 R Irradiance responsivity λp = 625 nm, ATIME = 0xF6 (27 ms) Ch1 4 counts/ ( μW/ Re Irradiance responsivity λ 850 nm ATIME 0xF6 (27 ms) Ch0 22.8 ( μW/ cm2) λp = 850 nm, ATIME = 0xF6 (27 ms) Ch1 12.5 cm2) 8 × Ch0 7 8 9 8 × Ch1 7 8 9 Gain scaling (relative to 1 ×) 16 × Ch0 15 16 17 × Gain scaling (relative to 1 ×) 16 × Ch1 15 16 17 × 111 ×, decoupling capacitor 25 mm Ch0 97 107 115 111 ×, decoupling capacitor 25 mm from VDD pin (Note 5) Ch1 100 115 125 NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production. 2. The 625 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength λp = 625 nm and spectral halfwidth Δλ½ = 20 nm. 3. The 850 nm irradiance Ee is supplied by a light-emitting diode with the following characteristics: peak wavelength λp = 850 nm and spectral halfwidth Δλ½ = 42 nm. 4. The integration time Tint, is dependent on internal oscillator frequency (fosc) and on the number of integration cycles (ATIME) in the Timing Register (0xFF) as described in the Register section. For nominal fosc = 750 kHz, nominal Tint = 2.7 ms × ATIME. 5. 111 × gain is affected by the line inductance between the V DD pin and the decoupling capacitor. See Figure 3 for 111 × gain scale versus line inductance characteristic. |
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