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AS5261 датащи(PDF) 16 Page - ams AG |
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AS5261 датащи(HTML) 16 Page - ams AG |
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16 / 33 page ![]() AS5261 Datasheet - Application In form atio n www.ams.com Revision 1.1 15 - 32 9 Application Information 9.1 Recommended Application Schematic Figure 10 shows the recommended schematic in the application. All components marked with (*) are optional and can be used to further increase the EMC. Figure 10. AS5261 6-Wire Connection with Pull-Up Resistors 9.2 Programming the AS5261 The AS5261 programming is a one-time-programming (OTP) method, based on polysilicon fuses. The advantage of this method is that no additional programming voltage is needed. The internal LDO provides the current for programming. The OTP consists of 128 bits; several bits are available for user programming. In addition factory settings are stored in the OTP memory. Both regions are independently lockable by build in lock bits. A single OTP cell can be programmed only once. Per default, the cell is “0”; a programmed cell will contain a “1”. While it is not possible to reset a programmed bit from “1” to “0”, multiple OTP writes are possible, as long as only unprogrammed “0”-bits are programmed to “1”. Independent of the OTP programming, it is possible to overwrite the OTP register temporarily with an OTP write command. This is possible only if the user lock bit is not programmed. Table 10. External Components Symbol Parameter Min Typ Max Unit Note C1 VDD buffer capacitor 0.8 1 1.2 µF Low ESR 0.3 Ω C2 VDD3V3 regulator capacitor 0.8 1 1.2 µF Low ESR 0.3 Ω C3 OUT load capacitor (sensor PCB) 0 4.7 nF C4 * VDD capacitor (optional) 4.7 nF Do not increase due to programming over output. R1 * VDD serial resistor (optional) 10 Ω CL OUT load capacitor (ECU) 0 33 nF R2 * OUT serial resistor (optional) 50 Ω RLPU OUT pull-up resistance 4 10 k Ω C1_x Electric Control Unit C2_x C3_x C4_x* R1_x* R2_x* RLPU_T CL_T TP1_T TP1_B 16 13 14 15 5 8 7 6 1 4 3 2 12 9 10 11 S_B S_T TP3_B TP3_T AS5261 VDD3V3_T VDD3V3_B RLPU_B CL_B Sensor PCB VDD1 VDD2 GND1 GND2 OUT2 OUT1 |
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