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TLP281 датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали TLP281
подробное описание детали  PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA)
PDF  8 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP281 датащи(HTML) 3 Page - Toshiba Semiconductor

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TLP281,TLP281-4
2010-08-27
3
Absolute Maximum Ratings (Ta = 25°C)
RATING
CHARACTERISTIC
SYMBOL
TLP281
TLP281−4
UNIT
Forward Current
IF
50
mA
Forward Current Derating
∆IF /°C
−0.7 (Ta≥53°C)
−0.5 (Ta≥25°C)
mA /°C
Pulse Forward Current (Note 1)
IFP
1
A
Reverse Voltage
VR
5
V
Junction Temperature
Tj
125
°C
Collector-Emitter Voltage
VCEO
80
V
Emitter-Collector Voltage
VECO
7
V
Collector Current
IC
50
mA
Collector Power Dissipation
(1 Circuit)
PC
150
100
mW
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
∆PC /°C
−1.5
−1.0
mW /°C
Junction Temperature
Tj
125
°C
Operating Temperature Range
Topr
−55 to 100
°C
Storage Temperature Range
Tstg
−55 to 125
°C
Lead Soldering Temperature
Tsol
260 (10s)
°C
Total Package Power Dissipation
(1 Circuit)
PT
200
170
mW
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
∆PT /°C
−2.0
−1.7
mW /°C
Isolation Voltage
(Note 2)
BVS
2500(AC,1min,R.H.≤60%)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width ≤ 100μs, frequency 100Hz
(Note 2) AC, 1 minute, R.H.≤60%,Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse Current
IR
VR = 5 V
10
μA
Capacitance
CT
V = 0, f = 1 MHz
30
pF
Collector-Emitter
Breakdown Voltage
V(BR) CEO
IC = 0.5 mA
80
V
Emitter-Collector
Breakdown Voltage
V(BR) ECO
IE = 0.1 mA
7
V
VCE = 48 V,
Ambient Light Below
(100 ℓx)
(Note 4)
0.01
(2)
0.1
(10)
μA
Collector Dark Current
(Note 3)
ICEO
VCE = 48 V, Ta = 85°C
Ambient Light Below
(100 ℓx)
(Note 4)
2
(4)
50
(50)
μA
Capacitance
(Collector to Emitter)
CCE
V = 0, f = 1 MHz
10
pF
(Note 3) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
(Note 4)Irradiation to marking side using standard light bulb.



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