MP4015 datasheet(2/4 Pages) TOSHIBA

2 / 4 page

MP4015

2006-10-27

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance from junction to

ambient

(4-device operation, Ta = 25°C)

ΣRth (j-a)

31.3

°C/W

Maximum lead temperature for

soldering purposes

(3.2 mm from case for 10 s)

260

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 45 V, IE = 0 A

―

μA

Collector cut-off current

ICEO

VCE = 45 V, IB = 0 A

―

μA

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0 A

0.3

―

Collector-base breakdown voltage

V (BR) CBO

IC = 10 mA, IE = 0 A

―

hFE (1)

VCE = 4 V, IC = 1 A

1000

―

DC current gain

hFE (2)

VCE = 4 V, IC = 3 A

1000

―

VCE (sat) (1) IC = 1 A, IB = 4 mA

―

0.9

1.4

Collector-emitter

VBE (sat) (2) IC = 3 A, IB = 10 mA

―

1.3

2.0

Saturation voltage

Base-emitter

VBE (sat)

IC = 1 A, IB = 4 mA

―

1.6

2.0

Base-emitter voltage

VBE

VCE = 4 V, IB = 3 A

―

1.8

2.5

Transition frequency

VCE = 3 V, IC = 0.5 A

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0 A, f = 1 MHz

―

Turn-on time

ton

―

0.6

―

Storage time

tstg

―

4.2

―

Switching time

Fall time

IB1 = −IB2 = 10 mA, duty cycle ≤ 1%

―

2.3

―

μs

Unclamped inductive load energy

ES/B

Refer to Figure 1

100

―

Note 1: Pulse width adjusted for desired ICP (ICP = 4.48 A min)

Note 2:

S/B

･

20 μs

VCC = 30 V

Output

IB2

IB1

Input

Figure 1 Measurement Circuit of Unclamped Inductive Load Energy ES/B

T.U.T

IB1 = 0.1 A

IB2 = −0.1 A

VCC = 20 V

IB1

ICP

VCE

IB2

Clamp (C-B zener)

MP4015 датащи(PDF) 2 Page - Toshiba Semiconductor

MP4015 датащи(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4

датащи скачать

ссылки URL