поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

AS1360 датащи(PDF) 9 Page - ams AG

номер детали AS1360
подробное описание детали  1.5A Low-Power, Posi t ive Vol tage Regulator
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  AMSCO [ams AG]
домашняя страница  http://www.ams.com
Logo AMSCO - ams AG

AS1360 датащи(HTML) 9 Page - ams AG

Back Button AS1360 Datasheet HTML 5Page - ams AG AS1360 Datasheet HTML 6Page - ams AG AS1360 Datasheet HTML 7Page - ams AG AS1360 Datasheet HTML 8Page - ams AG AS1360 Datasheet HTML 9Page - ams AG AS1360 Datasheet HTML 10Page - ams AG AS1360 Datasheet HTML 11Page - ams AG AS1360 Datasheet HTML 12Page - ams AG AS1360 Datasheet HTML 13Page - ams AG Next Button
Zoom Inzoom in Zoom Outzoom out
 9 / 14 page
background image
www.austriamicrosystems.com/LDOs/AS1360
Revision 1.07
8 - 13
AS1360
Datasheet - A p p l i c a t i o n I n f o r m a t i o n
9 Application Information
Figure 14. AS1360 - Typical Application Diagram
Power Dissipation
Power dissipation (PD) of the AS1360 is the sum of the power dissipated by the p-channel MOSFET and the quiescent current required to bias
the internal voltage reference and the internal power amplifier, and is calculated as:
PD (P-Channel MOSFET) = (VIN - VOUT)IOUT
(EQ 1)
Internal power dissipation as a result of the bias current for the internal voltage reference and the error amplifier is calculated as:
PD (Bias) = VINIGND
(EQ 2)
Total AS1360 power dissipation is calculated as:
PD(Total) = PD (P-Channel MOSFET) + PD (Bias)
(EQ 3)
The internal quiescent bias current (2 A, typ) is such that the PD(Bias) term of (EQ 3) can be disregarded and the maximum power dissipation
can be estimated using VIN(MAX) and VOUT(MIN) to obtain a maximum voltage differential between VIN and VOUT, and multiplying the maxi-
mum voltage differential by the maximum output current:
PD = (VIN(MAX)VOUT(MIN))IOUT(MAX)
(EQ 4)
Where:
VIN = 3.3 to 4.1V
VOUT = 3.0V ±2%
IOUT = 1 to 100mA
TAMB(MAX) = 55ºC
PMAX = (4.1V - (3.0V x 0.98)) x 100mA = 116.0mW
Junction Temperature
The AS1360 junction temperature (TJ) can be determined by first calculating the thermal resistance from junction temperature-to-ambient tem-
perature.
Note:
Thermal resistance is estimated to be the junction temperature-to-air temperature R
ΦJA, and is approximately 230°C/W or 335ºC/W
(when mounted on 1 square inch of copper). R
ΦJA will vary depending on PCB layout, air-flow and application specific conditions.
The AS1360 junction temperature is determined by calculating the rise in TJ above TAMB, and then adding the increase of TAMB:
TJ = PD(MAX) x R
ΦJA + TAMB
(EQ 5)
From (EQ 5), the value of TJ can be calculated as:
TJ = 116.0mW x 230ºC/W + 55ºC
Therefore:
TJ = 81.68ºC
AS1360
+9V
Alkaline
Battery
GND
1
3
VIN
2
VOUT
COUT
1µF
*
CIN
1µF
*
*
Tantalum Capacitor
VOUT = 3.3V



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com