LM385B datasheet(3/9 Pages) ONSEMI

номер детали	LM385B

подробное описание детали	Micropower Voltage Reference Diodes

PDF	9 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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3 / 9 page

LM285, LM385B

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ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

LM285-1.2

LM385-1.2/LM385B-1.2

Unit

Min

Typ

Max

Min

Typ

Max

Reverse Breakdown Voltage Change with Current

IRmin v IR v 1.0 mA, TA = +25°C

TA = Tlow to Thigh (Note 2)

1.0 mA

v IR v 20 mA, TA = +25°C

TA = Tlow to Thigh (Note 2)

DV(BR)R

1.0

1.5

2.0

2.5

Reverse Dynamic Impedance

IR = 100 mA, TA = +25°C

0.6

Average Temperature Coefficient

mA v IR v 20 mA, TA = Tlow to Thigh (Note 2)

DV(BR)/DT

ppm/

°C

Wideband Noise (RMS)

IR = 100 mA, 10 Hz v f v 10 kHz

120

Long Term Stability

IR = 100 mA, TA = +25°C ± 0.1°C

ppm/kHR

2. Tlow

= -40

°C for LM285-1.2, LM285-2.5

Thigh =+85°C for LM285-1.2, LM285-2.5

Tlow

= 0

°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5

Thigh =+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5

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