IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA44P15T IXTP44P15T

IXTQ44P15T IXTH44P15T

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

27

45

S

C

iss

13.4

nF

C

oss

V

675

pF

C

rss

183

pF

t

d(on)

25

ns

t

r

42

ns

t

d(off)

50

ns

t

f

17

ns

Q

g(on)

175

nC

Q

gs

V

65

nC

Q

gd

58

nC

R

thJC

0.42

°C/W

R

thCS

TO-220

0.50

°C/W

TO-247 & TO-3P

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

- 44

A

I

SM

Repetitive, Pulse Width Limited by T

JM

-176

A

V

SD

I

-1.3

V

t

rr

140

ns

Q

RM

0.87

μC

I

RM

-12.4

A

Resistive Switching Times

V

R

I

V