ASI10602 datasheet(1/1 Pages) ASI

номер детали	ASI10602

подробное описание детали	NPN SILICON RF POWER TRANSISTOR

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производитель	ASI [Advanced Semiconductor]

домашняя страница	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change witout notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 200 mA

35

V

BVCES

IC = 200 mA

65

V

BVEBO

IE = 10 mA

4.0

V

ICBO

VCB = 30 V

2.0

mA

hFE

VCE = 5.0 V

IC = 200 mA

5.0

---

COB

VCB = 30 V

f = 1.0 MHz

50

pF

GP

fT

VCE = 28 V

f = 150 MHz

VCE = 10 V

IC = 200 mA

f = 100 MHz

10

250

---

dB

MHz

NPN SILICON RF POWER TRANSISTOR

HF15-28F

DESCRIPTION:

The

ASI HF15-28F is Designed for

FEATURES:

• P

G = 21 dB min. at 15 W/30 MHz

• IMD

3 = -30 dBc max. at 15 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

4.0 A

VCBO

65 V

VCEO

35 V

VEBO

4.0 V

PDISS

40 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθ

JC

4.4

OC/W

PACKAGE STYLE .380 4L FLG

ORDER CODE: ASI10602

MINIMUM

inches / mm

.970 / 24.64

B

C

D

E

F

G

A

MAXIMUM

.385 / 9.78

.980 / 24.89

inches / mm

H

.160 / 4.06

.180 / 4.57

DIM

.220 / 5.59

.230 / 5.84

.105 / 2.67

.085 / 2.16

I

J

.240 / 6.10

.255 / 6.48

.785 / 19.94

F

B

G

.125

Ø.125 NOM.

FULL R

D

E

C

H

.112 x 45°

A

I

J

.004 / 0.10

.006 / 0.15

.280 / 7.11

.720 / 18.29

.730 / 18.54

B

E

C

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