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TO-236AB датащи(PDF) 2 Page - Supertex, Inc

номер детали TO-236AB
подробное описание детали  N-Channel Depletion-Mode DMOS FET
PDF  7 Pages
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производитель  SUTEX [Supertex, Inc]
домашняя страница  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TO-236AB датащи(HTML) 2 Page - Supertex, Inc

  TO-236AB Datasheet HTML 1Page - Supertex, Inc TO-236AB Datasheet HTML 2Page - Supertex, Inc TO-236AB Datasheet HTML 3Page - Supertex, Inc TO-236AB Datasheet HTML 4Page - Supertex, Inc TO-236AB Datasheet HTML 5Page - Supertex, Inc TO-236AB Datasheet HTML 6Page - Supertex, Inc TO-236AB Datasheet HTML 7Page - Supertex, Inc  
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2
LND150
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Electrical Characteristics (T
A = 25
O
C unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units Conditions
BV
DSX
Drain-to-source breakdown voltage
500
-
-
V
V
GS = -10V, ID = 1.0mA
V
GS(OFF)
Gate-to-source off voltage
-1.0
-
-3.0
V
V
GS = 25V, ID = 100nA
ΔV
GS(OFF)
Change in V
GS(OFF) with temperature
-
-
5.0
mV/OC V
GS = 25V, ID = 100nA
I
GSS
Gate body leakage current
-
-
100
nA
V
GS = ± 20V, VDS = 0V
I
D(OFF)
Drain-to-source leakage current
-
-
100
nA
V
GS = -10V, VDS = 450V
-
-
100
µA
V
DS = 0.8V Max Rating,
V
GS = -10V, TA = 125
O
C
I
DSS
Saturated drain-to-source current
1.0
-
3.0
mA
V
GS = 0V, VDS = 25V
R
DS(ON)
Static drain-to-source on-state resistance
-
850
1000
Ω
V
GS = 0V, ID = 0.5mA
ΔR
DS(ON)
Change in R
DS(ON) with temperature
-
-
1.2
%/OC V
GS = 0V, ID = 0.5mA
G
FS
Forward transductance
1.0
2.0
-
m
V
DS = 0V, ID = 1.0mA
C
ISS
Input capacitance
-
7.5
10
pF
V
GS = -10V,
V
DS = 25V,
f = 1.0MHz
C
OSS
Common source output capacitance
-
2.0
3.5
C
RSS
Reverse transfer capacitance
-
0.5
1.0
t
d(ON)
Turn-on delay time
-
0.09
-
µs
V
DD = 25V,
I
D = 1.0mA,
R
GEN = 25Ω
t
r
Rise time
-
0.45
-
t
d(OFF)
Turn-off delay time
-
0.1
-
t
f
Fall time
-
1.3
-
V
SD
Diode forward voltage drop
-
-
0.9
V
V
GS = -10V, ISD = 1.0mA
t
rr
Reverse recovery time
-
200
-
ns
V
GS = -10V, ISD = 1.0mA
Notes:
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Notes:
† I
D (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm
Thermal Characteristics
Package
I
D
(continuous)†
(mA)
I
D
(pulsed)
(mA)
Power Dissipation
@T
A = 25
O
C
(W)
θ
jc
(OC/W)
θ
ja
(OC/W)
I
DR
(mA)
I
DRM
†
(mA)
TO-236AB (SOT-23)
13
30
0.36
200
350
13
30
TO-92
30
30
0.74
125
170
30
30
TO-243AA (SOT-89)
30
30
1.6‡
15
78
30
30
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
f
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
GEN
0V
-10V



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