LMP8602MM datasheet(4/33 Pages) TI

4 / 33 page

LMP8602, LMP8602Q, LMP8603, LMP8603Q

SNOSB36D – JULY 2009 – REVISED MARCH 2013

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3.3V Electrical Characteristics

(1) (continued)

Unless otherwise specified, all limits ensured at TA = 25°C, VS = 3.3V, GND = 0V, −4V ≤ VCM ≤ 27V, and RL = ∞, Offset (Pin

7) is grounded, 10nF between VS and GND. Boldface limits apply at the temperature extremes.

Min

Typ

Max

Symbol

Parameter

Conditions

Units

(2)

(3)

(2)

Gain(4)

9.95

10.0

10.05

V/V

RF-INT

Output Impedance Filter Resistor

100

101

Ω

TCRF-INT

Output Impedance Filter Resistor Drift

±5

±50

ppm/°C

VOL

RL = ∞

A1 VOUT

A1 Output Voltage Swing

VOH

3.2

3.25

Output Buffer (From A2 (pin 4) to OUT ( pin 5 )

−2

VOS

Input Offset Voltage

≤ VCM ≤ VS

±0.5

−2.5

2.5

LMP8602

4.975

5.025

Gain(4)

V/V

LMP8603

9.95

10.05

−40

Input Bias Current of A2(8)

±20

n A

VOL,

LMP8602

RL = 100 kΩ

LMP8603

A2 VOUT

A2 Output Voltage Swing(9)(10)

VOH,

3.28

3.29

RL = 100 kΩ

Sourcing, VIN = VS, VOUT = GND

-25

-38

-60

ISC

Output Short-Circuit Current(11)

Sinking, VIN = GND, VOUT = VS

(8)

Positive current corresponds to current flowing into the device.

(9)

For this test input is driven from A1 stage in uni-directional mode (Offset pin connected to GND).

(10) For VOL, RL is connected to VS and for VOH, RL is connected to GND.

(11) Short-Circuit test is a momentary test. Continuous short circuit operation at elevated ambient temperature can result in exceeding the

maximum allowed junction temperature of 150°C.

5V Electrical Characteristics

(1)

Unless otherwise specified, all limits ensured for at TA = 25°C, VS = 5V, GND = 0V, −22V ≤ VCM ≤ 60V, and RL = ∞, Offset

(Pin 7) is grounded, 10nF between VS and GND. Boldface limits apply at the temperature extremes.

Min

Typ

Max

Symbol

Parameter

Conditions

Units

(2)

(3)

(2)

Overall Performance (From -IN (pin 1) and +IN (pin 8) to OUT (pin 5) with pins A1 (pin 3) and A2 (pin 4) connected)

Supply Current

1.1

1.5

LMP8602

49.75

50.25

Total Gain(4)

V/V

LMP8603

99.5

100

100.5

Gain Drift

−40°C ≤ TA ≤ 125°C

−2.8

±20

ppm/°C

Slew Rate(5)

VIN = ±0.25V

0.6

0.83

μs

Bandwidth

kHz

VOS

Input Offset Voltage

0.15

±1

TCVOS

Input Offset Voltage Drift(6)

−40°C ≤ TA ≤ 125°C

±10

μV/°C

0.1 Hz

− 10 Hz, 6 Sigma

17.5

μVP-P

Input Referred Voltage Noise

Spectral Density, 1 kHz

890

nV/

√Hz

(1)

The electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise

modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not

ensured.

(2)

Datasheet min/max specification limits are ensured by test.

(3)

Typical values represent the most likely parameter norms at TA = +25°C, and at the Recommended Operation Conditions at the time of

product characterization and are not ensured.

(4)

Both the gain of the preamplifier A1V and the gain of the buffer amplifier A2V are measured individually. The over all gain of both

amplifiers AV is also measured to assure the gain of all parts is always within the AV limits.

(5)

Slew rate is the average of the rising and falling slew rates.

(6)

Offset voltage drift determined by dividing the change in VOS at temperature extremes into the total temperature change.

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