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LM5021 датащи(PDF) 2 Page - Texas Instruments

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номер детали LM5021
подробное описание детали  LM5021 AC-DC Current Mode PWM Controller
PDF  23 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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LM5021 датащи(HTML) 2 Page - Texas Instruments

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VIN
VCC
OUT
RT
CS
GND
SS
COMP
1
2
3
4
8
7
6
5
LM5021
SNVS359D – MAY 2005 – REVISED MARCH 2013
www.ti.com
Connection Diagram
Figure 1. Top View
VSSOP-8
(See Package Number DGK0008A)
PDIP-8
(See Package Number P0008E)
PIN DESCRIPTIONS
Pin
Name
Description
Application Information
1
COMP
Control input for the Pulse Width Modulator and
COMP pull-up is provided by an internal 5K resistor which may
Hiccup comparators.
be used to bias an opto-coupler transistor.
2
VIN
Input voltage.
Input to start-up regulator. The VIN pin is clamped at 36V by
an internal zener diode.
3
VCC
Output only of a linear bias supply regulator.
VCC provides bias to controller and gate drive sections of the
Nominally 8.5V.
LM5021. An external capacitor must be connected from this pin
to ground.
4
OUT
MOSFET gate driver output.
High current output to the external MOSFET gate input with
source/sink current capability of 0.3A and 0.7A respectively.
5
GND
Ground return.
6
CS
Current Sense input.
Current sense input for current mode control and over-current
protection. Current limiting is accomplished using a dedicated
current sense comparator. If the CS comparator input exceeds
0.5 Volts the OUT pin switches low for cycle-by-cycle current
limit. CS is held low for 90ns after OUT switches high to blank
the leading edge current spike.
7
RT / SYNC
Oscillator timing resistor pin and synchronization
An external resistor connected from RT to GND sets the
input.
oscillator frequency. This pin will also accept synchronization
pulses from an external clock.
8
SS
Soft-start / Hiccup time
An external capacitor and an internal 22 µA current source set
the soft-start ramp. The soft -start capacitor controls both the
soft-start rate and the hiccup mode period.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LM5021



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