CMLDM5757 datasheet(1/3 Pages) CENTRAL

номер детали	CMLDM5757

подробное описание детали	SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET

PDF	3 Pages

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производитель	CENTRAL [Central Semiconductor Corp]

домашняя страница	http://www.centralsemi.com

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current (Steady State)

ID

430

mA

Maximum Pulsed Drain Current (tp=10μs)

IDM

750

mA

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance (Note 1)

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IGSSF, IGSSR VGS=4.5V, VDS=0

2.0

μA

IDSS

VDS=16V, VGS=0

1.0

μA

BVDSS

VGS=0, ID=250μA

20

V

VGS(th)

VDS=VGS, ID=250μA

0.45

1.0

V

VSD

VGS=0, IS=350mA

1.2

V

rDS(ON)

VGS=4.5V, ID=430mA

0.9

Ω

rDS(ON)

VGS=2.5V, ID=300mA

1.2

Ω

rDS(ON)

VGS=1.8V, ID=150mA

2.0

Ω

Crss

VDS=16V, VGS=0, f=1.0MHz

20

pF

Ciss

VDS=16V, VGS=0, f=1.0MHz

175

pF

Coss

VDS=16V, VGS=0, f=1.0MHz

30

pF

CMLDM5757

SURFACE MOUNT SILICON

DUAL P-CHANNEL

ENHANCEMENT-MODE

MOSFET

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM5757

consists of dual P-Channel enhancement-mode silicon

MOSFETs designed for high speed pulsed amplifier

and driver applications. These MOSFETs offer very low

rDS(ON) and low threshold voltage.

MARKING CODE: 77C

FEATURES:

• ESD protection up to 1800V (Human Body Model)

• 350mW power dissipation

• Very low rDS(ON)

• Low threshold voltage

• Logic level compatible

• Small, SOT-563 surface mount package

• Complementary dual N-Channel device: CMLDM3737

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2

APPLICATIONS:

• Load switch/Level shifting

• Battery charging

• Boost switch

• Electro-luminescent backlighting

SOT-563 CASE

R2 (5-June 2013)

www.centr a lsemi.com

Аналогичный номер детали - CMLDM5757

производитель	номер детали	датащи	подробное описание детали
Central Semiconductor C...	CMLDM5757	591Kb / 2P	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
	CMLDM5757	1Mb / 2P	Dual, Complementary MOSFETs
	CMLDM5757	1Mb / 4P	SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET

More results

Аналогичное описание - CMLDM5757

производитель	номер детали	датащи	подробное описание детали
Central Semiconductor C...	CMLDM8002A	524Kb / 2P	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CMKDM8005	945Kb / 3P	SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET
	CMLDM8005	1Mb / 3P	SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET
	CMRDM7590	437Kb / 2P	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CWDM305PD	660Kb / 2P	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CMKDM8005	945Kb / 3P	SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET
	CMLDM8005	1Mb / 4P	SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET
	CMRDM7590	437Kb / 2P	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CTLDM304P-M832DS	683Kb / 2P	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
	CTLDM8120-M832DS	758Kb / 5P	SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET R0 2-March 2012

More results

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